STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

FDPF10N60NZ : N-Channel UniFETTM II MOSFET 600V, 10A, 750m . For complete documentation, see the data sheet. UniFETTM II MOSFET is Fairchild TK10A60D. STP10NK60ZFP. CS10N60F A9HD. SVF11N60F. MDFS10N60DTH. FDPF10N60NZ . IPA60R650CE. FCPF600N60Z. STF10NM60N. STF10N60M2. CoolMOS CE is a product family launched by Infineon to address consumer and lighting applications. It offers benefits in efficiency and thermal behavior T1. Coupling inductor, 280uH, 1.4A, Na/Nm=0.6. EI-191-03377-T. SUMIDA. 20. Q1. MOSFET, N-channel, 650V, 7.3A, 0.6W, TO-220. FDPF10N60NZ . Fairchild. FDPF10N60NZ . Fairchild. 4. Q3. Bipolar transistor, NPN, 60V, 3A, hfe = 250min,. SOT-223. NZT560A. Fairchild. 5. BR1. Bridge rectifier, 1A, 600V, Micro-DIP.

Part Number FDPF10N60NZ
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 600V 10A TO-220F
Series UniFET-II
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1475pF @ 25V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Rds On (Max) @ Id, Vgs 750 mOhm @ 5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.48   Highest Price: $3.36
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