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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Product Overview. FDP2532 : N-Channel PowerTrench MOSFET 150V, 79A, 16m . For complete documentation, see the data sheet. FDP2532 . Features. Unit Type. FDP2532 . FDP2532 . TO220-3 (92.5-5-. 2.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish . Jan 13, 2017 FDP2532 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. FSSZ. 2.030183. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Analog Devices, Inc. reserves the right to change this product without prior notice. Information furnished by Analog Devices is believed to be accurate and Nov 16, 2007 FDP2532 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDG312P_NL. FDG312P. Fairchild Semiconductor. May 16, 2008.

Part Number FDP2532
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 150V 79A TO-220AB
Series PowerTrench
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5870pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Rds On (Max) @ Id, Vgs 16 mOhm @ 33A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.06   Highest Price: $4.61
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