Description
Product Overview. FDP2532 : N-Channel PowerTrench MOSFET 150V, 79A, 16m . For complete documentation, see the data sheet. FDP2532 . Features. Unit Type. FDP2532 . FDP2532 . TO220-3 (92.5-5-. 2.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish . Jan 13, 2017 FDP2532 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. FSSZ. 2.030183. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Analog Devices, Inc. reserves the right to change this product without prior notice. Information furnished by Analog Devices is believed to be accurate and Nov 16, 2007 FDP2532 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDG312P_NL. FDG312P. Fairchild Semiconductor. May 16, 2008.
Part Number | FDP2532 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 150V 79A TO-220AB |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5870pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 33A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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