Description
DATASHEET FDP047AN08A0 . FDH047AN08A0. Symbol. Parameter. MOSFET Maximum Ratings TC = 25 C unless otherwise noted. Thermal Characteristics. VDSS. Drain to Jul 12, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDP047AN08A0 . FDP047AN08A0 . TO220-3 (92.5-5-. 2.5DA_AlBW). Jan 8, 2016 FDP047AN08A0 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. FSSZ. 2.030183. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Jun 25, 2014 performed for FDP047AN08A0 and FDP032N08 in TO220 and FQPF13N50CF and FDPF20N50 in TO220F. These products were selected as RTN. OUTF. OUTE. DCM. DCM. S1. 11.5. V2. OUTF. VQ3. C4. 6.8n IC=0. R13. 18.2k. Q7. FDP047AN08A0 . Q8. FDP047AN08A0 . Q2. Q1. 12. V1. Vref. 20p IC=0.
Part Number | FDP047AN08A0 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 75V 80A TO-220AB |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FDP047AN08A0
STMicroel
180
1.35
SUNTOP SEMICONDUCTOR CO., LIMITED
FDP047AN08A0
STMICROELECT
30000
1.84
QUARKTWIN TECHNOLOGY LIMITED
FDP047AN08A0
ST/MICRON
1934
2.33
LANTEK INT'L TRADE LIMITED
FDP047AN08A0
ST
50
2.82
Pacific Corporation
FDP047AN08A0
STMicroelectronics
5500
3.31
AAC Technology Co., Limited