STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DATASHEET Nov 1, 2013 FDP036N10A . N-Channel PowerTrench. . MOSFET. 100 V, 214 A, 3.6 m . Features. RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 75 A. Jan 8, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDP036N10A . FDP036N10A . TO220-3 (92.5-5-. 2.5DA_AlBW) (G). Jan 8, 2016 FDP036N10A . TO220-3 (92.5-5-2.5DA_AlBW) (G). FSSZ. FSSZ. 2.030182. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Mar 12, 2013 FDP036N10A . 100 V. 3.6 m . 89 nC. 214 A. 129 nC. TO-220. FDP045N10A. 100 V. 4.5 m . 57 nC. 164 A. 120 nC. TO-220. FDPF045N10A. May 31, 2011 The FDP083N15A_F102, FDB082N15A, and FDP036N10A n- channel PowerTrench MOSFETs provide 66% improved figure of merit, QG x

Part Number FDP036N10A
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 100V TO-220AB-3
Series PowerTrench
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7295pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 333W (Tc)
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 75A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.68   Highest Price: $6
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FDP036N10A

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Luobei Electronics Co., Limited

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STMicroel

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HK HEQING ELECTRONICS LIMITED

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