Description
FDN338P . C8. 0.033 uF. C2. 3. 0.1. uF. R2. 5. 47. 0. C11. 0.1 uF. R6. NI. R35. R38. R3. 470. R1. 470. C1. 8. 0.0. 1. uF. U7. R1. 7. 27. U9. C1. 3. 68. uF. R23. 10 k. CMPWR150. SIMPLIFIED ELECTRICAL SCHEMATIC. GND. Drive. VOUT. VOUT . 3.3 V/500 mA. COUT. 10 F. VOUT. GND. -. CIN. 1 F. FDN338P . (Si2310DS). CMPWR280. SIMPLIFIED ELECTRICAL SCHEMATIC. GND. Drive. VOUT. VOUT . 3.3 V. 400 mA. COUT. 10 F. VOUT. GND. CIN1. 1 F. FDN338P . (Si2310DS). XT49MR-20-6.0000NTR. C5. 0.1. uF. R36. 10 k. R9. 10 k. Q5. FDN338P . U4. VC. 12. 06. 48. D1. 01. DP. C1. 8. 0.0. 1. uF. U9. U8. Q3. U1. 0. R14. 27. R11. 4.7 k. FDN338P . C8. 0.033 uF. C11. 0.1 uF. 100. R20. R35. R38. 470. R3. 470. R1. Q3. U8. 4.7 k. R11. 10 k. R4. 0.1 uF. C9. C24. 0.1 uF. C26. 0.1 uF. C7. 0.1 uF. 2.2 k.
Part Number | FDN338P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 1.6A SSOT3 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 451pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 1.6A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
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