Description
Jan 13, 2017 FDMC8010 . PQFN-8 (3.3x3.3) (S_G Clip). FSCP. FSCP. 0.070648. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. FDMC8010 : 30V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET is produced using Fairchild Jul 6, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDMC8010 . FDMC8010 . PQFN-8 (3.3x3.3). (S_G Clip). Jul 06, 2016. FDMC8010 . 2 1. 3. 4. 5. C10. 10uF. C15. 10uF. E6. 1. R52 50. R53. 560. L6. OPT. 1. 2. R1. 0. C8. 0.01uF. C5. 22uF. U6. LTC6655-MS8-2.048. VIN. 2. SHDN. 1. Oct 28, 2015 FDMC8010 . 5. 1. 2. 3. 4. 6 7 8. C1450. 10uF. 1210. C418. 2.2nF. R441. 2.49K. R118. 10.0K. R429. 150. D31. LED_WE1206. U47. FDMC8010 .
Part Number | FDMC8010 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 8-PQFN |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 94nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5860pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 54W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Power33 |
Package / Case | 8-PowerWDFN |
Image |
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