Part Number | FDFMA3N109 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 2.9A MICRO2X2 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 123 mOhm @ 2.9A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-MicroFET (2x2) |
Package / Case | 6-VDFN Exposed Pad |
Image |
FDFMA3N109
STMicroel
2312
1.72
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FDFMA3N109
STMICROELECT
9000
2.6675
SUMMER TECH(HK) LIMITED
FDFMA3N109
ST/MICRON
6000
3.615
Yingxinyuan INT'L (Group) Limited
FDFMA3N109
ST
102347
4.5625
Cicotex Electronics (HK) Limited
FDFMA3N109
STMicroelectronics
8000
5.51
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED