STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

FDC638APZ /D. 1. FDC638APZ . P-Channel 2.5V PowerTrench. . Specified MOSFET. 20V, 4.5A, 43m . Features. Max rDS(on) = 43m at VGS = 4.5V, FDC638APZ : -20V P-Channel 2.5V PowerTrench Specified MOSFET. For complete documentation, see the data sheet. This P-Channel 2.5V specified The 900844 is a high efficiency Power Management Integrated Circuit. (PMIC) capable of providing operating voltages for Ultra-mobile platforms for Netbook FDC638APZ . G. D. S. Q2. FDC638APZ . 4. 3. 1. 2. 5. 6. R16. 0. R16. 0. R2. 47K. R2. 47K. X1. FC-255_32.768KHz. X1. FC-255_32.768KHz. R23. 1K. R23. 1K.

Part Number FDC638APZ
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET P-CH 20V 4.5A SSOT-6
Series PowerTrench
Packaging Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Rds On (Max) @ Id, Vgs 43 mOhm @ 4.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT,6
Package / Case SOT-23-6 Thin, TSOT-23-6
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.65   Highest Price: $6.83
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Brand
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Part Number:

FDC638APZ

Brand:

ST/MICRON

D/C:
21+
Qty:

30000

Price (USD):

4.24

Company:

Shenzhen WORLDYICK Technology Co.,Ltd.

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Part Number:

FDC638APZ

Brand:

ST

D/C:
18
Qty:

3000

Price (USD):

5.535

Company:

Shenzhen lailitong Technology Co., Ltd

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Part Number:

FDC638APZ

Brand:

STMicroelectronics

D/C:
2021+
Qty:

65767

Price (USD):

6.83

Company:

SUNTOP SEMICONDUCTOR CO., LIMITED

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Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

FDC638APZ

Brand:

STMicroel

D/C:
20+/21+
Qty:

5000000

Price (USD):

1.65

Company:

Hongkong Shengshi Electronics Limited

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Part Number:

FDC638APZ

Brand:

STMICROELECT

D/C:
Qty:

33780

Price (USD):

2.945

Company:

HK HEQING ELECTRONICS LIMITED

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FDC638APZ Ref.

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