Part Number | FDC636P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 2.8A SSOT-6 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 2.8A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT,6 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
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