STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DATASHEET May 1, 2014 FDH50N50 / FDA50N50 N-Channel UniF. ET. TM. MOSFET. 2012 Fairchild Semiconductor Corporation. FDH50N50 / FDA50N50 Rev. C2. Jul 18, 2016 FDA50N50 . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. Jul 18, 2016 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FDA50N50 . FDA50N50 . TO3PN-3. Single. 0.16. 110. 28.4. 310. TO-3P. FDH50N50. N. 500. Single. 0.105. 105. 48. 625. TO-247. FDA50N50 . N. 500. Single. 0.105. 105. 48. 625. TO-3P. FQA19N60.

Part Number FDA50N50
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 500V 48A TO-3P
Series UniFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6460pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 625W (Tc)
Rds On (Max) @ Id, Vgs 105 mOhm @ 24A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.92   Highest Price: $4.86
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