Description
DATASHEET May 1, 2014 FDH50N50 / FDA50N50 N-Channel UniF. ET. TM. MOSFET. 2012 Fairchild Semiconductor Corporation. FDH50N50 / FDA50N50 Rev. C2. Jul 18, 2016 FDA50N50 . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. Jul 18, 2016 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FDA50N50 . FDA50N50 . TO3PN-3. Single. 0.16. 110. 28.4. 310. TO-3P. FDH50N50. N. 500. Single. 0.105. 105. 48. 625. TO-247. FDA50N50 . N. 500. Single. 0.105. 105. 48. 625. TO-3P. FQA19N60.
Part Number | FDA50N50 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 500V 48A TO-3P |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 137nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6460pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 24A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
Hot Offer
FDA50N50
ST
2250
3.875
Kinghead Electronics Co.,Limited
FDA50N50
STMicroelectronics
9600
4.86
NICE UPWAY INTERNATIONAL LIMITED
FDA50N50
STMicroel
19358
0.92
HK HEQING ELECTRONICS LIMITED
FDA50N50
STMICROELECT
900
1.905
WIN AND WIN ELECTRONICS LIMITED
FDA50N50
ST/MICRON
3000
2.89
Redstar Electronic Limited