Description
Datasheet Sep 23, 2003 www.irf.com. Class D Audio Amplifier Design. Class D Amplifier Introduction. Gate Driver. MOSFET. Package. Design Example. Theory of Apr 27, 2010 FCP20N60 . R18. 38.3k . 1/8W. Q4. FCP20N60 . R19. 10k . 1/8W. Transformer. R20. 1k . 1/8W. TX1. 66:6. Primary 20mH. Capacitor. TX2. 1:1. UNISONIC TECHNOLOGIES CO., LTD. 20N60. Power MOSFET www.unisonic. com.tw. 1 of 3. Copyright 2015 Unisonic Technologies Co., Ltd. QW-R502-587. Fairchild FCP20N60 power MOSFET datasheet in. Fig. 4. The curve was produced using a test circuit that drives the gate of the DUT (Device Under Test). Sep 25, 2013 output capacitance than SuperFET I MOSFET FCP20N60 . (for a typical switching power supply bulk capacitor voltage), as shown in Figure 13
Part Number | FCP20N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 20A TO-220 |
Series | SuperFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FCP20N60
STMicroel
10000
0.32
Hong Kong Capital Industrial Co.,Ltd
FCP20N60
STMICROELECT
9000
1.5
SUMMER TECH(HK) LIMITED
FCP20N60
ST/MICRON
405
2.68
Yingxinyuan INT'L (Group) Limited
FCP20N60
ST
24000
3.86
Cicotex Electronics (HK) Limited
FCP20N60
STMicroelectronics
11010
5.04
Ande Electronics Co., Limited