Description
Datasheet Nov 1, 2013 November 2013. FCP11N60F N-Ch annel SuperFET. . FRFET. . MOSFET. 2010 Fairchild Semiconductor Corporation. FCP11N60F Rev Nov 1, 2013 November 2013. FCP11N60N / FCPF11N60NT. N-Channel SupreMOS. . MO. SFE. T. 2009 Fairchild Semiconductor Corporation. Oct 9, 2009 LED driver board 120 V (AC); 60 HZ version. +. OUT. -. AC input. MKDS 2,5 / 2- 5, 08. Vin sense. Vgate. C12. 220 pF,. 630 V. V13. FCP11N60 . Apr 27, 2005 FGP20N6S2D SMPS2 and a MOSFET, the FCP11N60 . SuperFET (from Fairchild Semiconductor) in an SMPS application. These products Apr 6, 2011 FCP11N60 with SiC SBD. 385mOhm competitor with SiC SBD. Figure 51. FCP9N60N EON vs. FCP11N60 and Competitor at Half ID. Figure 52.
Part Number | FCP11N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 11A TO-220 |
Series | SuperFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1490pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FCP11N60
STMicroel
57500
0.3
HK HEQING ELECTRONICS LIMITED
FCP11N60
STMICROELECT
1000
1.4725
E-star Trading Enterprise Limited
FCP11N60
ST/MICRON
5000
2.645
Belt (HK) Electronics Co
FCP11N60
ST
7339
3.8175
E-Core Electronics Co.
FCP11N60
STMicroelectronics
9000
4.99
SUMMER TECH(HK) LIMITED