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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet Nov 1, 2013 November 2013. FCP11N60F N-Ch annel SuperFET. . FRFET. . MOSFET. 2010 Fairchild Semiconductor Corporation. FCP11N60F Rev Nov 1, 2013 November 2013. FCP11N60N / FCPF11N60NT. N-Channel SupreMOS. . MO. SFE. T. 2009 Fairchild Semiconductor Corporation. Oct 9, 2009 LED driver board 120 V (AC); 60 HZ version. +. OUT. -. AC input. MKDS 2,5 / 2- 5, 08. Vin sense. Vgate. C12. 220 pF,. 630 V. V13. FCP11N60 . Apr 27, 2005 FGP20N6S2D SMPS2 and a MOSFET, the FCP11N60 . SuperFET (from Fairchild Semiconductor) in an SMPS application. These products Apr 6, 2011 FCP11N60 with SiC SBD. 385mOhm competitor with SiC SBD. Figure 51. FCP9N60N EON vs. FCP11N60 and Competitor at Half ID. Figure 52.

Part Number FCP11N60
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 600V 11A TO-220
Series SuperFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 380 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.3   Highest Price: $4.99
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Part Number:

FCP11N60

Brand:

STMicroel

D/C:
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57500

Price (USD):

0.3

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

FCP11N60

Brand:

STMICROELECT

D/C:
20+
Qty:

1000

Price (USD):

1.4725

Company:

E-star Trading Enterprise Limited

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Part Number:

FCP11N60

Brand:

ST/MICRON

D/C:
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5000

Price (USD):

2.645

Company:

Belt (HK) Electronics Co

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Part Number:

FCP11N60

Brand:

ST

D/C:
Qty:

7339

Price (USD):

3.8175

Company:

E-Core Electronics Co.

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Part Number:

FCP11N60

Brand:

STMicroelectronics

D/C:
21+
Qty:

9000

Price (USD):

4.99

Company:

SUMMER TECH(HK) LIMITED

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FCP11N60 Ref.

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