Description
Feb 14, 2000 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 31. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Low side drains inductor current. 2. During dead time body diode of low side conducts and keep inductor current flow. 3. At the moment high side is turned ON
Part Number | FB31N20D |
Brand | STMicroelectronics |
Image |
FB31N20D
STMicroel
1728
0.89
Hgme International Co., Limited
FB31N20D
STMICROELECT
3000
2.0725
Bonase Electronics (HK) Co., Limited
FB31N20D
ST/MICRON
100
3.255
Lattice International Trading Co., Limited
FB31N20D
ST
20000
4.4375
Redstar Electronic Limited
FB31N20D
STMicroelectronics
129469
5.62
Cicotex Electronics (HK) Limited