Description
Jan 25, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low Oct 12, 2011 ID = 75A. This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. General Description. The MAX8552 highly integrated monolithic MOSFET dri- ver is capable of driving a pair of power MOSFETs in single or multiphase
Part Number | F3205S |
Brand | STMicroelectronics |
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F3205S
STMicroel
2
0.14
H.K. GuoXin Electronics Technology Limited
F3205S
STMICROELECT
1
0.7425
WALTON ELECTRONICS CO., LIMITED
F3205S
ST/MICRON
102013
1.345
Cicotex Electronics (HK) Limited
F3205S
ST
3762
1.9475
Belt (HK) Electronics Co
F3205S
STMicroelectronics
2500
2.55
Nosin (HK) Electronics Co.