Part Number | EMD6T2R |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS NPN/PNP PREBIAS 0.15W EMT6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Image |
EMD6T2R
STMicroel
100000
0.15
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
EMD6T2R
STMICROELECT
6000
1.565
Riking Technology (HK) Co., Limited
EMD6T2R
ST/MICRON
296000
2.98
Shenzhen Zhisheng Trading Co., Ltd
EMD6T2R
ST
4911
4.395
DES TECHNOLOGY (HK) LIMITED
EMD6T2R
STMicroelectronics
4970
5.81
DES TECHNOLOGY (HK) LIMITED