Part Number | EMD4DXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS PREBIAS NPN/PNP SOT563 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k, 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
EMD4DXV6T1G
STMicroel
4318
0.07
HK HEQING ELECTRONICS LIMITED
EMD4DXV6T1G
STMICROELECT
3409
0.8825
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
EMD4DXV6T1G
ST/MICRON
6070
1.695
Cicotex Electronics (HK) Limited
EMD4DXV6T1G
ST
141
2.5075
N&S Electronic Co., Limited
EMD4DXV6T1G
STMicroelectronics
6196
3.32
N&S Electronic Co., Limited