Description
MAXIMUM RATINGS. Rating. Symbol. Value. Unit. Collector Emitter Sustaining Voltage. VCEO. 400. Vdc. Collector Base Breakdown Voltage. VCES. 700. Vdc. MJE13006, MJ E13007 NPN. ELECTRICAL CHARACTERISTICS ( Tc = 25 C unless otherwise noted ). Characteristic Symbol Min Max Unit. Type. Type. DCT880-W02-0020-04xy. DCT880-W03-0020-04xy. DCT880-W02- 0035-04xy. DCT880-W03-0035-04xy. DCT880-W02-0055-04xy. DESCRIPTION. The device is manufactured using high voltage. Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. Mar 13, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low
Part Number | E13007 |
Brand | STMicroelectronics |
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E13007
STMicroel
346
1.04
CTS ELECTRONIC (HK) CO.,LIMITED
E13007
STMICROELECT
100000
2.44
TIANHAO INDUSTRIAL CO., LIMITED
E13007
ST/MICRON
6000
3.84
BRTD TECH CO.,LIMITED
E13007
ST
49850
5.24
Z.H.T TECHNOLOGY HK LIMITED
E13007
STMicroelectronics
30000
6.64
HK CHUANGYIXIN ELECTRONIC TECHNOLOGY LIMITED