Description
These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and MAXIMUM RATINGS (TC=25 C unless otherwise noted). SYMBOL. UNITS. Collector-Emitter Voltage. VCEO. 400. V. Collector-Emitter Voltage. VCEV. 700. V . FEATURES. Package type: leaded. Detector type: phototransistor. Dimensions (L x W x H in mm): 7 x 7 x 6. Peak operating distance: < 0.5 mm. Operating Transistor, NPN, 700V, D13005 ,TO-126. 1. 14. F1. Fuse:1A 250V 3.6*10mm With Pigtail, ceramic tube. 1. 15. R1. Chip Resistor, 22 , 0805, 5%. 1. 16. R2. Transistor, NPN, 700V, D13005 ,TO-126. Huawei. F1. Fuse:1A 250V 3.6*10mm With Pigtail, ceramic tube walter. R1. Chip Resistor, 22 , 0805, 5%. TY-OHM. R2.
Part Number | D13005 |
Brand | STMicroelectronics |
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D13005
STMicroel
1778
1.57
Ande Electronics Co., Limited
D13005K
STMICROELECT
5000
2.625
Ande Electronics Co., Limited
D13005ED
ST/MICRON
53000
3.68
Digchip Technology Co.,Limited
D13005ED
ST
40000
4.735
Bonase Electronics (HK) Co., Limited
D13005MD
STMicroelectronics
7663
5.79
E-Core Electronics Co.