Part Number | CSD23202W10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 12V 2.2A 4DSBGA |
Series | NexFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 6V |
Vgs (Max) | -6V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 53 mOhm @ 500mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DSBGA (1x1) |
Package / Case | 4-UFBGA, DSBGA |
Image |
Hot Offer
CSD23202W10
STMICROELECT
12950
1.7325
ONSTAR ELECTRONICS CO., LIMITED
CSD23202W10
ST/MICRON
15000
2.535
SUNTOP SEMICONDUCTOR CO., LIMITED
CSD23202W10
ST
1400
3.3375
SITONGDA TECHNOLOGY (HK) LIMITED
CSD23202W10
STMicroelectronics
40000
4.14
Zhaoxin Electronic Limited
CSD23202W10
STMicroel
5377
0.93
HK FEILIDI ELECTRONIC CO., LIMITED