Description
Datasheet CSD19536KCS 100 V N-Channel NexFET Power MOSFET. 1 Features. Product Summary. 1 Ultra-Low Qg and Qgd. TA = 25 C. TYPICAL VALUE. UNIT. Oct 18, 2014 Qty. Eco Plan. (2). Lead/Ball Finish. (6). MSL Peak Temp. (3). Op Temp ( C). Device Marking. (4/5). Samples. CSD19536KCS . ACTIVE. TO-220. 2 | Motor Drive and Control Solutions. Texas Instruments. Motor Drive and Control Solutions. Table of Contents. Motor Drive and Control Solutions. 2 Introduction. www.irf.com. 1. AN-978 RevD. Application Note AN-978. HV Floating MOS-Gate Driver ICs. (HEXFET is a trademark of International Rectifier). Table of Contents. Nov 12, 2007 Application Note. Revision: Issue Date: Prepared by: 00. 2007-11-12. Markus Hermwille. Key Words: IGBT driver, gate resistor, selection,
Part Number | CSD19536KCS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V TO-220 |
Series | NexFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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