STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet CSD19536KCS 100 V N-Channel NexFET Power MOSFET. 1 Features. Product Summary. 1 Ultra-Low Qg and Qgd. TA = 25 C. TYPICAL VALUE. UNIT. Oct 18, 2014 Qty. Eco Plan. (2). Lead/Ball Finish. (6). MSL Peak Temp. (3). Op Temp ( C). Device Marking. (4/5). Samples. CSD19536KCS . ACTIVE. TO-220. 2 | Motor Drive and Control Solutions. Texas Instruments. Motor Drive and Control Solutions. Table of Contents. Motor Drive and Control Solutions. 2 Introduction. www.irf.com. 1. AN-978 RevD. Application Note AN-978. HV Floating MOS-Gate Driver ICs. (HEXFET is a trademark of International Rectifier). Table of Contents. Nov 12, 2007 Application Note. Revision: Issue Date: Prepared by: 00. 2007-11-12. Markus Hermwille. Key Words: IGBT driver, gate resistor, selection,

Part Number CSD19536KCS
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 100V TO-220
Series NexFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.27   Highest Price: $3.07
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