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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

PRODUCTION DATA. CSD19502Q5B . SLPS413B DECEMBER 2013 REVISED MAY 2017. CSD19502Q5B 80 V N-Channel NexFET Power MOSFET. 1. Apr 2, 2015 8. UCC2808D-2. U1. 1 F. C4. GND. GND. 200KHz. 330pF. C3. 10.7k. R6. 1.00k. R3. /ENABLE. GND. 4. 7,8. 1,2,3. 5,6,. Q1. CSD19502Q5B . 3.3. Here MOSFET CSD19502Q5B (80V/100A, DNK0008A) and diode V10P-M3/86A (100V/10A, TO-227) are chosen. 4.3. LM3481 Flyback CCM Flyback Transfer LTV-817S. VOUT. BAT+. 330 F. C3. 10 F. C4. 25.5k. R5. 60.4k. R2. 4. 7,8. 1,2. ,3 . 5,6. ,. Q1. CSD19502Q5B . 100. R6. 2200pF. C12. 1. 3. 2. D1. V10P10-M3/86A. CSD19502Q5B . 80. 20. 2.7. 157. 3.4. 48. 8.6. 14. Single. SON5x6. 55 to 150. CSD19503KCS. 80. 20. 2.8. 94. 7.6. 28. 5.4. 9.8. Single. TO-220. 55 to 175.

Part Number CSD19502Q5B
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 80V 100A 8SON
Series NexFET
Packaging Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 19A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON (5x6)
Package / Case 8-PowerTDFN
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.83   Highest Price: $6.2
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