Description
1. CAS100H12AM1 Summary. Device Uses. Cree introduces the industrys first fully qualified and production ready. All-Silicon Carbide power module. data on Crees CAS100H12AM1 1.2kV, 100A 50mm half-bridge module and Crees CCS050M12CM2 1.2kV,. 50A six-pack module. Discussion: This discussion these concerns and illustrates how a typical SiC MOSFET module, in this case Crees CAS100H12AM1 1.2kV. 100A half-bridge, was initially characterized. 1. www.cree.com. CAS100H12AM1 . 1200V 100A . . Z-FETTM MOSFET Z-RecTM . . . . . . : C. A. S. 1. all-SiC module ( CAS100H12AM1 1200V, 100A SiC MOSFET mod- ule) ready for immediate evaluation/design activity and high volume manufacturing as seen
Part Number | CAS100H12AM1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 1200V 168A MODULE |
Series | Z-FET |
Packaging | 2 N-Channel (Half Bridge) |
FET Type | Bulk |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 168A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id | 3.1V @ 50mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 800V |
Power - Max | 568W |
Operating Temperature | - |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Image |
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