Part Number | C2M0160120D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1200V 17.7A TO-247 |
Series | Z-FET |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 17.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 32.6nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 527pF @ 800V |
Vgs (Max) | +25V, -10V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
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C2M0160120D
STMicroel
392
0.79
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
C2M0160120D
STMICROELECT
14000
1.735
MY Group (Asia) Limited
C2M0160120D
ST/MICRON
1694
2.68
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16736
3.625
HL Electronics (Hong Kong) Co.,Ltd
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10000
4.57
Xiefeng (HK) INT'L Electronics Limited