Part Number | C2M0080120D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1200V 31.6A TO247 |
Series | C2M |
Packaging | Bulk |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs(th) (Max) @ Id | 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 1000V |
Vgs (Max) | +25V, -10V |
FET Feature | - |
Power Dissipation (Max) | 192W (Tc) |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
Hot Offer
C2M0080120D
STMicroel
25775
0.26
ZHUOYUEHENGSHENG ELECTRONICS (HK) LIMITED
C2M0080120D
STMICROELECT
6124
1.415
Belt (HK) Electronics Co
C2M0080120D
ST/MICRON
2250
2.57
LYT (HONGKONG) CO., LIMITED
C2M0080120D
ST
50
3.725
Antony Electronic Ltd.
C2M0080120D
STMicroelectronics
340
4.88
Bonase Electronics (HK) Co., Limited