Description
Apr 27, 2015 C2M0025120D Material Content Data Sheet Rev -. Cree, Inc. 4600 Silicon Drive. Durham, NC 27703. USA Tel: +1.919.313.5300. Fax: +1.919. C2M0025120D . TO-247-3. Tube. 30. 600. 600. C2M0040120D. TO-247-3. Tube. 30. 600. 600. C2M0080120D. TO-247-3. Tube. 30. 600. 600. C2M0160120D. VGS = -5V. . R JC. . 40. (3) C2M0025120D
Part Number | C2M0025120D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1200V 90A TO-247 |
Series | Z-FET |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs(th) (Max) @ Id | 2.4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 161nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 2788pF @ 1000V |
Vgs (Max) | +25V, -10V |
FET Feature | - |
Power Dissipation (Max) | 463W (Tc) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 50A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
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