Description
DESCRIPTION. The BUL510 is manufactured using high voltage. Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter. Electronic Transformer Design-in Guidelines. Type. Package. Typical. Application . BUL39D*. BUL38D*. BUL49D*. BUL58D*. BUL59. BUL67. BUL510 . BUL89.
Part Number | BUL510 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS NPN 450V 10A TO-220 |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 450V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.25A, 5A |
Current - Collector Cutoff (Max) | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
Power - Max | 100W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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BUL510
STMicroel
293
0.87
FantastIC Sourcing
BUL510
STMICROELECT
552
1.655
Xiefeng (HK) INT'L Electronics Limited
BUL510
ST/MICRON
10
2.44
Cicotex Electronics (HK) Limited
BUL510
ST
18431
3.225
Yingxinyuan INT'L (Group) Limited
BUL510
STMicroelectronics
9614
4.01
ATLANTIC TECHNOLOGY LIMITED