STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet BSS138N . PG-SOT-23 H6433: 10000. SKs. Rev. 2.86 page 1. 2012-04-17. Parameter. Symbol Conditions. Unit. Continuous drain current. I D. T A=25 C. 0.23. 1. 2. 3. Material Content Data Sheet. Sales Product Name. BSS138N H6327. Issued. 29. August 2013. MA#. MA001097548. Package. PG-SOT23-3-5. Weight* . Nov 2, 2010 1. Product profile. 1.1 General description. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small. SOT363 (SC-88) BSS138. Document number: DS30144 Rev. 20 - 2. 1 of 5 www.diodes.com. November 2013. Diodes Incorporated. BSS138. N-CHANNEL ENHANCEMENT BSS138 N -channel MOSFET can be utilized instead. If the accuracy and temperature drift of the total design has stringent requirements, use a more accurate

Part Number BSS138N
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 60V 230MA SOT-23
Series SIPMOS
Packaging Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Rds On (Max) @ Id, Vgs 3.5 Ohm @ 230mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.49   Highest Price: $4.46
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BSS138N

Brand:

STMicroel

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21+
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30000

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0.49

Company:

Cinty Int'l (HK) Industry Co., Limited

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Part Number:

BSS138N H6327

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STMICROELECT

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4000

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Company:

HYTON TECHNOLOGY LIMITED

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Part Number:

BSS138N

Brand:

ST/MICRON

D/C:
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Price (USD):

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Company:

HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED

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Part Number:

BSS138N H6327

Brand:

ST

D/C:
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Qty:

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Price (USD):

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Company:

Authent-IC Technology Limited

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Part Number:

BSS138N H6327

Brand:

STMicroelectronics

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10000

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4.46

Company:

HK HEQING ELECTRONICS LIMITED

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