STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Apr 26, 2013 BSC009NE2LS . OptiMOSTM. Power-MOSFET. Features. Optimized for e-fuse and ORing application. Very low on-resistance R DS(on) @ V Material Content Data Sheet. Sales Product Name. BSC009NE2LS . Issued. 29. August 2013. MA#. MA001010850. Package. PG-TDSON-8-7. Weight*. Figure 8 Schematic part 4. Power inductance: WE 7443556082 (820nH). Buck- MOSFETs: BSC010N04LS. Boost MOSFETs: BSC009NE2LS . D1: CENTRAL CMDSH-3TR. L: PULSE PA 0515.321NLT 0.32 H. M1: INFINEON BSC032NE2LS. M2: INFINEON BSC009NE2LS . 1.0 F. 1.0 F. 0.22 F. 0.32 H. BSC009NE2LS . SP000893362. BSC009NE2LSATMA1. SuperSO8. 25. 0.9. 1.2 2.0. 100. BSC010NE2LS. SP000776124. BSC010NE2LSATMA1. SuperSO8.

Part Number BSC009NE2LS
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 25V 41A TDSON-8
Series OptiMOS
Packaging Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 12V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs 0.9 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.15   Highest Price: $1.32
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ACHIEVE ELECTRONICS CO., LIMITED

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Xiefeng (HK) INT'L Electronics Limited

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STMicroel

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SUNTOP SEMICONDUCTOR CO., LIMITED

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BSC009NE2LS

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Ande Electronics Co., Limited

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