Description
Bottom View. TO251A. IPAK. AOI2N60 . VDS. VGS. IDM. IAR. EAR. EAS. Peak diode recovery dv/dt dv/dt. TJ, TSTG. TL. Symbol. R JA. R CS. R JC. Maximum Junction-to-Ambient A,G. TC=25 C. -. 55. Maximum. Thermal Characteristics. Units. The AOI2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with
Part Number | AOI2N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 2A TO251A |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 56.8W (Tc) |
Rds On (Max) @ Id, Vgs | 4.4 Ohm @ 1A, 10V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251A |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
AOI2N60
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