Description
AO4466 . 30V N-Channel MOSFET. General Description. The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Jun 4, 2008 Review of final electrical test result confirms that AO4466 passes AOS quality and reliability requirements. The released product will be Document No. PD-00519. ALPHA & OMEGA. Version B. SEMICONDUCTOR. Title AO4466 Marking Description. SO 8 PACKAGE MARKlN G DESCRIPTION. Jul 21, 2009 DMN3024LSD. AO4842. AP4232AGM. FDS6900AS. NTMD4840R2G. -. DMN3024LSS. AO4466 . AP6618GM. FDS8884. NTMS7N03R2G. Page 1. Document Number: 90715 www.vishay.com. Revision: 18-Nov-10. 1. This document is subject to change without notice. THE PRODUCTS
Part Number | AO4466 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 10A 8-SOIC |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 448pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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