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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

AO4466 . 30V N-Channel MOSFET. General Description. The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Jun 4, 2008 Review of final electrical test result confirms that AO4466 passes AOS quality and reliability requirements. The released product will be Document No. PD-00519. ALPHA & OMEGA. Version B. SEMICONDUCTOR. Title AO4466 Marking Description. SO 8 PACKAGE MARKlN G DESCRIPTION. Jul 21, 2009 DMN3024LSD. AO4842. AP4232AGM. FDS6900AS. NTMD4840R2G. -. DMN3024LSS. AO4466 . AP6618GM. FDS8884. NTMS7N03R2G. Page 1. Document Number: 90715 www.vishay.com. Revision: 18-Nov-10. 1. This document is subject to change without notice. THE PRODUCTS

Part Number AO4466
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 30V 10A 8-SOIC
Series -
Packaging Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 448pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.1W (Ta)
Rds On (Max) @ Id, Vgs 23 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.65   Highest Price: $6.26
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STMicroelectronics

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Acon Electronics Limited

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STMicroel

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Cicotex Electronics (HK) Limited

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AO4466

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HK HEQING ELECTRONICS LIMITED

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Finestock Electronics HK Limited

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AO4466

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ST

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Far East Electronics Technology Limited

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