Description
The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable. May 30, 2008 AOS Semiconductor. Product Reliability Report. AO4427 /AO4427L, rev B. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc. Document No. PD-00267. ALPHA & OME GA Version C. SEMICON,I) UCTOR Title AO4427 Marking Description. SO-8 PACKAGE MARKING DESCRIPTION. Page 1. Vishay Siliconix. Si4427BDY. Document Number: 72295. S09-0764-Rev. D, 04-May-09 www.vishay.com. 1. P-Channel 30-V (D-S) MOSFET.
Part Number | AO4427 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 30V 12.5A 8SOIC |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 12.5A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
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