Description
The AO3424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is ALPHA & OMEGA. SEMICONDUCTOR. Document No. ID-00465. Version. B. Title. AO3424 Marking Description. SOT-23 PACKAGE MARKING DESCRIPTION . Jul 6, 2012 AO3424 . Q1. 7.68K. R2. SD107WS-7-F. D1. GN D. GN D. Display Backlight. SRAM_CS. +3.3V. G1. G2. G3. ADDR5. ADDR4. ADDR3. MCLR. Aug 4, 2010 0.22R. R4. C1. 10uF. +3.3V. L1. 15uH. SD107WS-7-F. D1. C2. 10uF. Display Connector V1. R2. 20R 1/8W. DNP. R3. 2. 3. 1. Q1. AO3424 . 37. AO3424 . Q1. +5V_PD. +9V. SD107WS. D1. LPS3015-153ML. 15uH. L1. +3.3V. SDA1. SCL1. +3.3V. +3.3V. 0.1uF. C6. 0.1uF. C7. SDO. 1. SDx. 2. VDDIO. 3. NC.
Part Number | AO3424 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 2A SOT23 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.4W (Ta) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3L |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
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