Description
BVDSS. 30. V. VDS=30V, VGS=0V. 1. TJ=55 C. 5. IGSS. 10. A. VGS(th). Gate Threshold Voltage. 1.2. 1.8. 2.4. V. ID(ON). 50. A. 14. 17. TJ=125 C. 20. 24. 18. BVDSS. -30. V. VDS=-30V, VGS=0V. -1. TJ=55 C. -5. IGSS. 100. nA. VGS(th). Gate Threshold Voltage. -1.5. -2.0. -2.5. V. ID(ON). -70. A. 16.5. 20. TJ=125 C. 24. Switched-Mode Power Supplies. Replacement of NPN and PNP Discrete Solutions. DC-DC Converters. 4-A Peak-Source and 4-A Peak-Sink Symmetrical. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
Part Number | A04468 |
Brand | STMicroelectronics |
Image |
A04468
STMicroel
82
1.34
Sunrise(HK)Electronics Technology Co., Limited
A04468
STMICROELECT
452000
2.305
IC Chip Co., Ltd.
A04468
ST/MICRON
30000
3.27
Shenzhen Kesheng Shunyuan Electronics Co., Ltd.
A04468
ST
24000
4.235
Cicotex Electronics (HK) Limited
A04468
STMicroelectronics
452000
5.2
IC Chip Co., Ltd.