Description
ID. STP80NF70. 68 V. < 0.0098 . 98 A. 1. 2. 3. TO-220. 3#. $. 3. Table 1. Device summary. Order code. Marking. Package. Packaging. STP80NF70. 80NF70 . This Power MOSFET series realized with. STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and Oct 19, 2004 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 32. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. This Power MOSFET is the latest development of. STMicroelectronis unique Single Feature Size strip-based process. The resulting transistor. Aug 21, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 150. mJ. IAR. Avalanche Current . 38. A. EAR. Repetitive
Part Number | 80NF70 |
Brand | STMicroelectronics |
Image |
80NF70
STMicroel
8154
1.13
Hong Kong Lin Core Technology Limited
80NF70
STMICROELECT
1108
2.0475
HK HEQING ELECTRONICS LIMITED
80NF70
ST/MICRON
5000
2.965
Ande Electronics Co., Limited
80NF70
ST
2511
3.8825
CIS Ltd (CHECK IC SOLUTION LIMITED)
80NF70
STMicroelectronics
24000
4.8
Cicotex Electronics (HK) Limited