Description
High power PNP epitaxial planar bipolar transistor. Features. High breakdown voltage VCEO = -250 V. Complementary to 2ST5949 . Typical ft = 25 MHz.
Part Number | 2ST5949 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS NPN 250V 17A TO-3 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 17A |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
Current - Collector Cutoff (Max) | 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
Power - Max | 250W |
Frequency - Transition | 25MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
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2ST5949
STMicroel
5000
0.69
XingSheng Technology (HK) Limited
2ST5949
STMICROELECT
117
1.2975
FLOWER GROUP(HK)CO.,LTD
2ST5949
ST/MICRON
3260
1.905
ONSTAR ELECTRONICS CO., LIMITED
2ST5949
ST
1800
2.5125
S.E. Components
2ST5949
STMicroelectronics
8000
3.12
MY Group (Asia) Limited