Description
DATASHEET Jul 1, 2011 2SK3767 . C10. 3.3 nF. 2 kV. Q4. BC847C reserved. 1. 2. 1. 2. D10. PMBD914. 1. AUXPFC. GPFC. FBPFC. VBUS. BOOST. BOOST. VBUS. 2. Aug 9, 2012 2SK3767 . GLHB. SHHB. WB2. VCdc. EOL. IFB. 7. T3C. 68 nF. 100 V. C13. D9. PMBD6100. 68 nF. 100 V. R16. 3.3 . 1 %. 0W25. R17. 3.3 . Feb 3, 2012 F1 fuse ceramic; 1 A. 0001.2504. SCHURTER. L1. HB inductor; 2 mH; 2.6 A. 760801080. W rth Elektronik. Q1. 2SK3767 . 2SK3767 (Q). Toshiba. 1. MOSFET, N-channel, 600 V, 2 A, 4.5 W, TO-220V. Toshiba. 2SK3767 . Q2, Q3, Q7,. Bipolar, NPN, 40 V, 200 mA, 330 mW, SOT-23. Infineon. MMBT3904LT1. 4.
Part Number | 2SK3767 |
Brand | STMicroelectronics |
Image |
2SK3767
STMicroel
5020
1.78
HK HEQING ELECTRONICS LIMITED
2SK3767
STMICROELECT
32431
2.5375
Hongkong Dasenic Electronic Limited
2SK3767(STA4,X,M)
ST/MICRON
50000
3.295
Redstar Electronic Limited
2SK3767
ST
60000
4.0525
Yingxinyuan INT'L (Group) Limited
2SK3767
STMicroelectronics
153180
4.81
Cicotex Electronics (HK) Limited