STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

April 2011. Doc ID 018729 Rev 1. 1/10. 10. 2SD1047 . High power NPN epitaxial planar bipolar transistor. Features. High breakdown voltage VCEO = 140 V. OFF CHARACTERISTICS. Collector-Base Breakdown Voltage V(BRXHBO V. ( lc = 5.0 mA, IE= 0) 160. Collector-Emitter Breakdown Voltage VmmcEo V. ( ic= 5.0 Introduction. This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra. High Frequency Transistor ZsBai7 transistor is desi9ned for use in 9enera| purpose power charactgristic. Vcs = T40V(Min). * complement to 2SD1047 . FEATURES;. Derate above 250G. 2SD1047 TRANSISTOR (NPN). FEATURES. Large current capacitance. Complementary PNP Types:2SB817. APPLICATIONS. High audio frequency

Part Number 2SD1047
Main Category Discrete Semiconductor Products
Sub Category Transistors - Bipolar (BJT) - Single
Brand STMicroelectronics
Description TRANS NPN 140V 12A TO-3P
Series -
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Max) 12A
Voltage - Collector Emitter Breakdown (Max) 140V
Vce Saturation (Max) @ Ib, Ic 700mV @ 700mA, 7A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 1A, 5V
Power - Max 100W
Frequency - Transition 20MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.16   Highest Price: $5.35
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STMicroel

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MX-CHIPS ELECTRONICS LIMITED

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2SD1047

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STMICROELECT

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2100

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Corich International Ltd.

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2SD1047

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ST/MICRON

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935

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Cicotex Electronics (HK) Limited

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2SD1047

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ST

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9000

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SUMMER TECH(HK) LIMITED

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2SD1047

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STMicroelectronics

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24651

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CIS Ltd (CHECK IC SOLUTION LIMITED)

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2SD1047 Ref.

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