Description
April 2011. Doc ID 018729 Rev 1. 1/10. 10. 2SD1047 . High power NPN epitaxial planar bipolar transistor. Features. High breakdown voltage VCEO = 140 V. OFF CHARACTERISTICS. Collector-Base Breakdown Voltage V(BRXHBO V. ( lc = 5.0 mA, IE= 0) 160. Collector-Emitter Breakdown Voltage VmmcEo V. ( ic= 5.0 Introduction. This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra. High Frequency Transistor ZsBai7 transistor is desi9ned for use in 9enera| purpose power charactgristic. Vcs = T40V(Min). * complement to 2SD1047 . FEATURES;. Derate above 250G. 2SD1047 TRANSISTOR (NPN). FEATURES. Large current capacitance. Complementary PNP Types:2SB817. APPLICATIONS. High audio frequency
Part Number | 2SD1047 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS NPN 140V 12A TO-3P |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 140V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 700mA, 7A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1A, 5V |
Power - Max | 100W |
Frequency - Transition | 20MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P |
Image |
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STMicroel
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2100
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