Description
2N6107 /D. 2N6107 , 2N6109, 2N6111 (PNP),. 2N6288, 2N6292 (NPN). Complementary Silicon. Plastic Power Transistors. These devices are designed for use CP611- 2N6107 . PNP - High Current Transistor Die. 6.0 Amp, 70 Volt. Die Size. 80 x 99 MILS. Die Thickness. 12.5 1.0 MILS. Base Bonding Pad Size. 12 x 32 Jan 1, 2013 2N6107 . PNP Silicon. Complementary. Power Transistor. Maximum Ratings*. Symbol. Rating. Rating. Unit. VCEO. Collector-Emitter Voltage. VCEO(sus) = 70 Vdc (Min) - 2N6107 , 2N6292. High Current Gain Bandwidth Product. fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92. fT = 10 MHz (Min) Apr 2, 2001 ON Semiconductor. SJE2927. D45H11. ON Semiconductor. SJE2953LFBU. 2N6107 . ON Semiconductor. SJE2957. TIP50. ON Semiconductor.
Part Number | 2N6107 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS PNP 70V 7A TO-220 |
Series | - |
Packaging | Tube |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 7A |
Voltage - Collector Emitter Breakdown (Max) | 70V |
Vce Saturation (Max) @ Ib, Ic | 3.5V @ 3A, 7A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A, 4V |
Power - Max | 40W |
Frequency - Transition | 4MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 |
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