Description
The CENTRAL SEMICONDUCTOR 2N5109 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high. SYMBOL. TEST CONDITIONS. MINIMUM. TYPICAL. MAXIMUM. UNITS. BVCEO. IC = 5.0 mA. 20. V. BVCER. IC = 5.0 mA. RBE = 10 . 40. V. BVCBO. IC = 100 CP229- 2N5109 . NPN - RF Transistor Die. 0.4 Amp, 20 Volt. MECHANICAL SPECIFICATIONS: Die Size. 21.7 x 21.7 MILS. Die Thickness. 8.7 MILS. Surface mount equivalent to 2N5109 . Low noise. Highly reliable hermetic package. SOT-23 footprint compatible. MAXIMUM RATINGS: (TA=25 C unless GEOMETRY. PROCESS DETAILS. PRINCIPAL DEVICE TYPE. 2N5109 . GROSS DIE PER 4 INCH WAFER. 21,000. PROCESS CP229. Small Signal Transistor.
Part Number | 2N5109 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | STMicroelectronics |
Description | TRANS RF NPN 20V 400MA TO-39 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Frequency - Transition | 1.2GHz |
Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
Gain | - |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
Current - Collector (Ic) (Max) | 400mA |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 |
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2N5109
STMicroel
16000
0.66
Finestock Electronics HK Limited
2N5109
STMICROELECT
180
1.6225
SUNTOP SEMICONDUCTOR CO., LIMITED
2N5109
ST/MICRON
2035
2.585
FLOWER GROUP(HK)CO.,LTD
2N5109
ST
1000
3.5475
Antony Electronic Ltd.
2N5109
STMicroelectronics
6668
4.51
Belt (HK) Electronics Co