Description
Datasheet Qualified per MIL-PRF-19500/366. T4-LDS-0056 Rev. 1 (080812). Page 1 of 3. DEVICES. LEVELS. 2N3498. 2N3499. 2N3500. 2N3501 . JANSM 3K Rads (Si). Oct 5, 2011 CP195-2N5682-CT. CP195-2N5682-WN. 2N3501 . 2N5682. Die Size: 30 x 30 mils. Die Thickness: 7.5 mils. Bond Pad Area (Emitter): 8 x 8 mils. GEOMETRY. PROCESS DETAILS. PRINCIPAL DEVICE TYPES. 2N5682. 2N3501 . GROSS DIE PER 4 INCH WAFER. 12,550. PROCESS CP195. Small Signal 2N3501 . NPN HIGH VOLTAGE 150. 150. 6.0. 0.50. 75. 100 300 150. 10. 0.40. 150. 150 8.0. - -. - -. - -. 2N3502. PNP AMPL/SWITCH. 45. 45. 5.0. 0.01**. 30. Semiconductor Components Industries, LLC, 2010. March, 2010 Rev. 4. 1. Publication Order Number: MJW3281A/D. MJW3281A (NPN). MJW1302A (PNP).
Part Number | 2N3501 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS NPN 150V 0.3A TO-39 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 300mA |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 1W |
Frequency - Transition | 150MHz |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 |
Image |
2N3501
STMicroel
3000
1.01
Good Time Electronic Group Limited
2N3501
STMICROELECT
25000
2.3675
Ysx Tech Co., Limited
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75
3.725
FLOWER GROUP(HK)CO.,LTD
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ST
50
5.0825
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STMicroelectronics
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Xinshop Electronics Co.,Ltd.