Description
2N3019 , 2N3019S, 2N3700. Low Power Transistors. NPN Silicon. Features. MIL PRF 19500/391 Qualified. Available as JAN, JANTX, and JANTXV. 2N3019 . SMALL SIGNAL NPN TRANSISTOR. DESCRIPTION. The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed. The CENTRAL SEMICONDUCTOR 2N3019 , 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL CP305- 2N3019 . NPN - High Current Transistor Die. Die Size. 31 x 31 MILS. Die Thickness. 9.0 MILS. Base Bonding Pad Size. 5.9 x 11.8 MILS. Emitter Bonding 2N3019 . CMPT3019. CXT3019. CZT3019. GROSS DIE PER 4 INCH WAFER. 11,212. PROCESS CP305. Small Signal Transistor. NPN - High Current Transistor
Part Number | 2N3019 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS NPN 80V 1A TO-5 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
Power - Max | 800mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Image |
2N3019
STMicroel
10
0.07
H.X.Y ELECTRONIC HK LIMITED
2N3019
STMICROELECT
100000
0.98
VBsemi Electronics Co., Limited
2N3019
ST/MICRON
860
1.89
FLOWER GROUP(HK)CO.,LTD
2N3019
ST
15000
2.8
Junzhan Electronic (HK) Limited
2N3019
STMicroelectronics
12
3.71
Antony Electronic Ltd.