Description
Datasheet Junction and Storage Temperature Range. Maximum Junction-to-Ambient A,D. Power Dissipation B . PD. TC=25 C. Thermal Characteristics. 300. -55 to 150. Nov 1, 2013 1.2. * Notes : 1. VGS = 0 V. 2. ID = 250 A. BV. DS. S, (N o rmalized). Drain-S ource B reakd o w n. Voltage. TJ, Junction Temperature [ C]. -100. rating; pulse width limited by maximum junction temperature (see fig. 11). b . VDD = - 25 V, starting TJ = 25 C, L = 15 mH, Rg = 25 , IAS = - 3.2 A (see fig. 12) . 2011 7 1 600V 650V MOSFET xN60 A/ B A 600V B . 650V Mar 1, 1996 QA REV: FAIRCHILD SEMICONDUCTOR CORPORATION. HTB: B . (FSCINT). FSCINT Labe l samp le. TO-220 Tube. Configuration: Figure 4.0.
Part Number | 10N60LB |
Brand | STMicroelectronics |
Image |
10N60L
STMicroel
10000
1.56
Digchip Technology Co.,Limited
10N60L
STMICROELECT
8175
2.47
E-Core Electronics Co.
10N60L-A
ST/MICRON
1619
3.38
EASY WAY COMPONENTS (HK) CO., LIMITED
10N60L-B-TF2-T
ST
8392
4.29
Shenzhen Senyuan Technology Electronic.Ltd