Description
Datasheet IRFP150N . HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low HEXFET Power MOSFET. This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per Sep 4, 2014 Absolute Maximum Ratings. Parameter. Units. ID @ VGS = 10V, TC = 25 C. Continuous Drain Current. 21. ID @ VGS = 10V, TC = 100 C Document Number: 91203 www.vishay.com. S11-0446-Rev. B, 14-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED Application Report. SNVA678B September 2012 Revised May 2013. AN-2296 SM72295: Highly Integrated Gate Driver for. 800VA to 3KVA Inverter.
Part Number | IRF150NPBF |
Brand | STMicroelectronics |
Image |
IRF150NPBF
STMicroel
5500
1.83
Cicotex Electronics (HK) Limited
IRF150NPBF
STMICROELECT
5187
2.99
Dedicate Electronics (HK) Limited
IRF1503SPBF
ST/MICRON
2919
4.15
Wide Key International Limited
IRF1503S
ST
8500
5.31
Yingxinyuan INT'L (Group) Limited
IRF1503LPBF
STMicroelectronics
1000
6.47
MY Group (Asia) Limited